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The challenges of characterizing — power devices from lab to fab

The recent drive toward greater energy efficiency has created an increasing demand for better high power semiconductor devices such as diodes, FETs, IGBTs and others. New technologies hold the promise of higher performance, including lower ON-state losses, lower OFF-state leakage, faster switching, and reduced loss while switching. However, along with the improved performance of these devices, characterization and measurements are becoming more complex and difficult. This article addresses a typical workflow in the design and development of a power semiconductor device, and discusses some of the equipment and measurement challenges associated with them.

Author(s):  Stauffer, Lee
Issue:  KIPiS 2013 #2
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Current issue
#4 August 2018
KIPiS 2018 #4
Topic of the issue:
Modern instrumentation
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