![]() |
![]() |
![]() |
RU |
Login
Newsletters
There is no newsletter category found. Information
|
MOSFETs characterization in the low power range: overcoming test connection challenges due to high capacitances
The Semiconductor Industry is always
searching for new special materials,
dielectric solutions and new device geometries
for scaling down the device size
further and further. Lateral and vertical
heterostructures of 2D materials for instance
have led to new revolutionary tiny
and low power electronics. It’s the typical
problem of electrical characterization in
the low current range: the need to identify
the attainable device performance under
different conditions for low power / low
leakage currents MOSFETs. The problem
is practically solved by using a certain
number of source measure units
(SMUs), special instruments capable of
sourcing current or voltage while measuring
both current and voltage.
Author(s): Vinci, Andrea Issue: KIPiS 2020 #4 Related Information:
Companies' news
KIPiS articles
KIPiS News & Events
|
Current issue
Search
|
|
|
© "Test & Measuring Instruments and Systems" ("KIPiS"), 2000-2023 |