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MOSFETs characterization in the low power range: overcoming test connection challenges due to high capacitances
The Semiconductor Industry is always searching for new special materials, dielectric solutions and new device geometries for scaling down the device size further and further. Lateral and vertical heterostructures of 2D materials for instance have led to new revolutionary tiny and low power electronics. It’s the typical problem of electrical characterization in the low current range: the need to identify the attainable device performance under different conditions for low power / low leakage currents MOSFETs. The problem is practically solved by using a certain number of source measure units (SMUs), special instruments capable of sourcing current or voltage while measuring both current and voltage.
Author(s): Vinci, Andrea
Issue: KIPiS 2020 #4
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